II.10 フロンティア研究センター

フロンティア研究センターは,平成17年度に国際的に評価の高い研究成果を有する研究グループを選定することで,工学部内に設置された.本センターは,ナノテクノロジー研究部門,人間情報工学研究部門,地圏エネルギー研究部門で構成され,ナノテクノロジー部門には,センターの中核である寄付講座(日亜講座)のナノマテリアルテクノロジー研究室が設置されている.設置から平成20年度までは,福井前研究部長をセンター長として,多くの教育研究成果を達成している.

II.10.1 ナノマテリアルテクノロジー(日亜寄附)講座

ナノテクノロジーを基盤にしたモノ作りの研究として,主に半導体を中心とした高機能材料の作製,原子分子サイズの超微細加工,高機能な物性評価,光工学・電子工学分野における新規なデバイス開発を目指して,「ナノ半導体」の一貫した研究を推進している.特に,分子線エピタキシー法,走査プローブ法による原子層レベルの結晶成長とナノ構造加工技術について研究を進めている.またフェムト秒レーザを用いた超高速分光,非線形光学応答などの光学物性の評価に重点を置き,半導体ナノ構造による新規光学物性発現による超高速光情報処理用デバイスなどのデバイス応用を目指した研究を進めている.

II.10.1.1 教員組織

(1) 氏名,(2) メールアドレス,(3) 職名・学位,(4) 専門分野,(5) 所属学会(役職名),(6) 社会活動(役職名),(7) 主要研究テーマ,(8) キーワード,(9) 共同研究可能テーマ

(1) 井須 俊郎, Toshiro Isu, (2) (電子メール), (3) 特任教授・工学博士, (4) 半導体物理学, 光デバイス, 結晶成長学, 超高速フォトニクス, 光物性, (5) 応用物理学会・電子材料シンポジウム・電気学会・日本真空協会 (関西支部幹事)・社団法人 レーザー学会, (6) , (7) ナノ構造半導体の物性とデバイス応用, (8) 結晶成長, 半導体光物性, 半導体量子構造, ナノテクノロジー, 超高速光学応答測定, (9) (@.collaborate)

(1) 北田 貴弘, Takahiro Kitada, (2) kītāđā (@fŗċ ₍.₎ tōkūśhīmā-ū ₍.₎ āċ ₍.₎ jp, (3) 准教授・博士(工学), (4) 半導体量子工学, (5) 応用物理学会・日本物理学会・IEEE, (6) , (7) 分子線エピタキシー法による半導体ナノ構造の作製に関する研究, (8) 半導体ナノ構造, 分子線エピタキシー, (9) 半導体ナノ構造の電気的,光学的特性評価

(1) 熊谷 直人, Naoto Kumagai, (2) (電子メール), (3) 特任講師・博士(工学), (4) 半導体量子工学, (5) , (6) , (7) 分子線エピタキシーによる半導体ナノ構造の作製, (8) 分子線エピタキシー, 半導体ナノ構造, (9) (@.collaborate)

(1) 盧 翔孟, Xiangmeng Lu, (2) xm-lū (@tōkūśhīmā-ū ₍.₎ āċ ₍.₎ jp, (3) 特任助教・博士, (4) 半導体量子工学, (5) 応用物理学会, (6) , (7) III-V半導体成長, (8) 量子ドット, 半導体デバイス, 半導体ナノ構造, 分子線エピタキシー, (9) (@.collaborate)

II.10.1.2 研究業績

【著  書】
【学術論文】

  1. Yukinori Yasunaga, Hyuga Ueyama, Ken Morita, Takahiro Kitada and Toshiro Isu : Strongly Enhanced Four-Wave Mixing Signal from GaAs/AlAs Cavity with InAs Quanynm Dots Embedded in Strain-Relaxed Barriers, Japanese Journal of Applied Physics, Vol.52, No.4, p.04CG09, 2013.

  2. Shinpei Tanabe, Yoshinori Nakagawa, Toshihiro Okamoto, Masanobu Haraguchi, Toshiro Isu and Genichi Shinomiya : Fabrication and evaluation of photonic metamaterial crystal, Applied Physics. A, Materials Science & Processing, Vol.112, (号), pp.613-619, 2013.

  3. Takahiro Kitada, Sho Katoh, Toshikazu Takimoto, Yoshinori Nakagawa, Ken Morita and Toshiro Isu : Terahertz Waveforms Generated by Second-Order Nonlinear Polarization in GaAs/AlAs Coupled Multilayer Cavities Using Ultrashort Laser Pulses, IEEE Photonics Journal, Vol.5, No.3, p.6500308, 2013.

  4. Takahiro Kitada, Sho Katoh, Toshikazu Takimoto, Yoshinori Nakagawa, Ken Morita and Toshiro Isu : Terahertz emission from a GaAs/AlAs coupled multilayer cavity with nonlinear optical susceptibility inversion, Applied Physics Letters, Vol.102, No.25, p.251118, 2013.

  5. Takahiro Kitada, Hyuga Ueyama, Ken Morita and Toshiro Isu : Ultrafast photocarrier relaxation processes in Er-doped InAs quantum dots embedded in strain-relaxed InGaA sbarriers, Journal of Crystal Growth, Vol.378, (号), pp.485-488, 2013.

  6. Naoto Kumagai, Shunsuke Ohkouchi, Katsuyuki Watanabe, Satoshi Iwamoto and Yasuhiko Arakawa : Rim formation on non-elongated InAs quantum dots grown by partial cap and annealing process at low temperature, Journal of Crystal Growth, Vol.378, pp.558-561, 2013.

  7. Shunsuke Ohkouchi, Naoto Kumagai, Katsuyuki Watanabe, Satoshi Iwamoto and Yasuhiko Arakawa : Shape evolution of low density InAs quantum dots in the partial capping process by using As2 source, Journal of Crystal Growth, Vol.378, pp.549-552, 2013.

  8. Takahiro Kitada, Yukinori Yasunaga, Yoshinori Nakagawa, Ken Morita and Toshiro Isu : Wavelength conversion via four-wave mixing in a triple-coupled multilayer cavity, Applied Physics Letters, Vol.103, No.10, p.101109, 2013.

  9. Takahiro Kitada, Chiho Harayama, Ken Morita and Toshiro Isu : Two-color lasing in a coupled multilayer cavity with InAs quantum dots by optical pumping, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.10, No.11, pp.1434-1437, 2013.

  10. Takahiro Kitada, Yukinori Yasunaga, Yoshinori Nakagawa, Ken Morita and Toshiro Isu : Four-wave mixing in a GaAs/AlAs triple-coupled multilayer cavity for novel ultrafast wavelength conversion devices, Japanese Journal of Applied Physics, Vol.53, No.4S, p.04EG03, 2014.

  11. Chiho Harayama, Sho Katoh, Yoshinori Nakagawa, Ken Morita, Takahiro Kitada and Toshiro Isu : Wafer-bonded coupled multilayer cavity with InAs quantum dots for two-color emission, Japanese Journal of Applied Physics, Vol.53, No.4S, p.04EG11, 2014.

  12. Haruyoshi Katayama, Michito Sakai, Junpei Murooka, Masafumi Kimata, Takahiro Kitada, Toshiro Isu, Mikhail Patrashin, Iwao Hosako and Yasuhiro Iguchi : Development Status of Type II Superlattice Infrared Detector in JAXA, Sensors and Materials, Vol.26, No.4, pp.225-234, 2014.

  13. Masanori Ogarane, Yukinori Yasunaga, Yoshinori Nakagawa, Ken Morita, Takahiro Kitada and Toshiro Isu : Four-wave mixing in GaAs/AlAs triple-coupled cavity with InAs quantum dots, Japanese Journal of Applied Physics, Vol.54, p.04DG05, 2015.

  14. Chiho Harayama, Sho Katoh, Yoshinori Nakagawa, Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada and Toshiro Isu : Effect of cavity-layer thicknesses on two-color emission in coupled multilayer cavities with InAs quantum dots, Japanese Journal of Applied Physics, Vol.54, p.04DG10, 2015.

  15. Xiangmeng Lu, Shuzo Matsubara, Yoshinori Nakagawa, Takahiro Kitada and Toshiro Isu : Suppression of photoluminescence from wetting layer of InAs quantum dots grown on (113)B GaAs with AlAs cap, Journal of Crystal Growth, Vol.425, pp.106-109, 2015.

  16. Masanori Ogarane, Sho Katoh, Yoshinori Nakagawa, Ken Morita, Takahiro Kitada and Toshiro Isu : Terahertz emission from a coupled multilayer cavity with InAs quantum dots, Journal of Crystal Growth, Vol.425, pp.303-306, 2015.

  17. Hiroto Ota, Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada and Toshiro Isu : Fabrication of two - color surface emitting device of a coupled cavity structure with InAs QDs formed by wafer - bonding, Japanese Journal of Applied Physics, Vol.55, No.4S, p.04EH09, 2016.

  18. Keisuke Murakumo, Yuya Yamaoka, Naoto Kumagai, Takahiro Kitada and Toshiro Isu : Photoconductivity of Er-doped InAs quantum dots embedded in strain-relaxed InGaAs layers with 1.5mm cw and pulse excitation, Japanese Journal of Applied Physics, Vol.55, No.4S, p.04EH12, 2016.

【総説・解説】
【国際会議 Proceedings】

  1. Takahiro Kitada, Chiho Harayama, Ken Morita and Toshiro Isu : Two-Color Lasing in a Coupled Multilayer Cavity with InAs Quantum Dots by Optical Pumping, The 40th International Symposium on Compound Semiconductors (ISCS2013), No.TuC1-5, Kobe Convention Center, Kobe, Japan, May 2013.

  2. Haruyoshi Katayama, Junpei Murooka, Ryota Sato, Masafumi Kimata, Takahiro Kitada, Toshiro Isu, Mikhail Patrashin and Iwao Hosako : Development of Type II Superlattice Detector for Future Space Applications in JAXA, CLEO-PR & OECC/PS 2013, No.TuC1-3, Kyoto International Conference Center, Kyoto, Japan, July 2013.

  3. Hiroaki Suzuki, Masanobu Haraguchi, Toshihiro Okamoto, Koji Oshodani, Toshiro Isu and Masuo Fukui : Emission from metal slit array on Laser Diode electrode through evanescent field scattering process, The 9th Asia-Pacific Conference on Near-field Optics (APNFO2013), (巻), p.132, Singapore, July 2013.

  4. Hiroaki Suzuki, Koji Oshodani, Masanobu Haraguchi, Masuo Fukui, Toshiro Isu and Toshihiro Okamoto : The light extraction control of the semiconduct or light-emitting devices using plasmonic structure, Asia Student Photonics Conference 2013 (ASPC2013), (巻), No.P-40, p.70, Osaka, July 2013.

  5. Takahiro Kitada, Yukinori Yasunaga, Yoshinori Nakagawa, Ken Morita and Toshiro Isu : Four-wave mixing in a GaAs/AlAs triple-coupled multilayer cavity for novel ultrafast wavelength conversion devices, 2013 International Conference on Solid State Devices and Materials (SSDM2013), No.K-5-3, Fukuoka, Sep. 2013.

  6. Chiho Harayama, Sho Katoh, Yoshinori Nakagawa, Ken Morita, Takahiro Kitada and Toshiro Isu : GaAs/AlAs Coupled Multilayer Cavity by Wafer-Bonding for Two-Color Emission Devices, 2013 International Conference on Solid State Devices and Materials (SSDM2013), No.K-4-4, Fukuoka, Sep. 2013.

  7. R Yamauchi, Xiangmeng Lu, M Koyama, H Sasakura, Y Nakata and S Muto : Volume distribution by quantum dot growth model with 2 kinds of diffusion atoms, 8th International Conference on Quantum Dots (QD 2014), No.M141, Pisa, Italy, May 2014.

  8. Chiho Harayama, Sho Katoh, Yoshinori Nakagawa, Takahiro Kitada and Toshiro Isu : Effect of non-equivalent cavities on two-color lasing in a GaAs/AlAs coulpled multilayer cavity with InAs quantum dots, The 41th International Symposium on Compound Semiconductors (ISCS2014), No.P57, Montpellier, France, May 2014.

  9. Xiangmeng Lu, Shuzo Matsubara, Takahiro Kitada and Toshiro Isu : Enhanced photoluminescence form InAs quantum dots with a thin AlAs cap layer grown on (100) and (311)B GaAs substrate, The 41th International Symposium on Compound Semiconductors (ISCS2014), No.Tu-B3-4, Montpellier, France, May 2014.

  10. Xiangmeng Lu, Shuzo Matsubara, Yoshinori Nakagawa, Takahiro Kitada and Toshiro Isu : Suppression of photoluminescence from wetting layer of InAs quantum dots grown on (113)B GaAs with AlAs cap, The 18th International Conference on Molecular Beam Epitaxy(MBE2014), No.TuA2-5, Flagstaff, Arizona, Sep. 2014.

  11. Masanori Ogarane, Sho Katoh, Yoshinori Nakagawa, Ken Morita, Takahiro Kitada and Toshiro Isu : Terahertz Emission from a Coupled Multilayer Cavity with InAs Quantum Dots, The 18th International Conference on Molecular Beam Epitaxy(MBE2014), No.TuA2-2, Flagstaff, Arizona, Sep. 2014.

  12. Chiho Harayama, Sho Katoh, Yoshinori Nakagawa, Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada and Toshiro Isu : Effect of Cavity-Layer Thicknesses on Two-Color Lasing in a Coupled Multilayer Cavity with InAs Quantum Dots, 2014 International Conference on Solid State Devices and Materials (SSDM2014), No.B-3-3, つくば, Sep. 2014.

  13. Masanori Ogarane, Yukinori Yasunaga, Yoshinori Nakagawa, Ken Morita, Takahiro Kitada and Toshiro Isu : GaAs/AlAs triple-coupled cavity with InAs quantum dots for an ultrafast wavelength conversion device via the four-wave-mixing, 2014 International Conference on Solid State Devices and Materials (SSDM2014), No.PS-7-7, つくば, Sep. 2014.

  14. Xiangmeng Lu, Akihiro Kawaguchi, Naoto Kumagai, Takahiro Kitada and Toshiro Isu : Temperature Dependence Photoluminescence From InAs Quantum Dots With AlAs Cap Grown on (311)B and (100) GaAs Substrate, The 42th International Symposium on Compound Semiconductors (ISCS2015), No.Mo3GN1.5, Santa Barbara, CA USA, June 2015.

  15. Keisuke Murakumo, Naoto Kumagai, Takahiro Kitada and Toshiro Isu : In-plane photoconductivity of InAs QDs embedded in strain-relaxed InGaAs layer, The 42th International Symposium on Compound Semiconductors (ISCS2015), No.Mo3GN1.2, Santa Barbara, CA USA, June 2015.

  16. Naoto Kumagai, Keisuke Murakumo, Takahiro Kitada and Toshiro Isu : Mobility of in-plane photocurrent of stacked InAs QDs layers in strain-relaxed InGaAs matrix, 17th International Conference on lated Semiconductor Structures(MSS17), No.Mo-PM-14, Sendai, July 2015.

  17. Xiangmeng Lu, Akihiro Kawaguchi, Naoto Kumagai, Takahiro Kitada and Toshiro Isu : Investigation of Carriers Thermal Transfer in Self-asssembled Quantum Dots Grown on (311)B GaAs by Temperature Dependence Photoluminescence, 17th International Conference on lated Semiconductor Structures(MSS17), No.Th-PM-13, 仙台, July 2015.

  18. Shunicni Muto, Ryo Yamauchi, Osamu Muramatsu, Xiangmeng Lu, Masataka Koyama, Yoshiaki Nakata and Hirotaka Sasakura : 2D Islands by growth model with 2 kinds of diffusive atoms, 17th International Conference on lated Semiconductor Structures(MSS17), No.Th-PM-3, 仙台, July 2015.

  19. Takahiro Kitada, Masanori Ogarane, Toshiaki Takamoto, Naoto Kumagai, Xiangmeng Lu, Ken Morita and Toshiro Isu : Enhancement of Terahertz Emission from GaAs/AlAs Coupled Multilayer Cavities by InAs Quantum Dots on (113)B-Oriented Substrates, The Second International Symposium on Frontiers in THz Technology (FTT2015), No.Pos1.24, Hamamatsu, Aug. 2015.

  20. Keisuke Murakumo, Yuya Yamaoka, Naoto Kumagai, Takahiro Kitada and Toshiro Isu : Photoconductivity with 1.55 m excitation of InAs QDs embedded in InGaAs barriers on GaAs substrate, 2015 International Conference on Solid State Devices and Materials (SSDM2015), No.PS-7-9, Sapporo, Sep. 2015.

  21. Hiroto Ota, Chiho Harayama, Tomohisa Maekawa, Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada and Toshiro Isu : Fabrication of Two-Color Surface Emitting Device of a Coupled Cavity Structure with InAs QDs Formed by Wafer-Bonding, 2015 International Conference on Solid State Devices and Materials (SSDM2015), No.A-7-6, Sapporo, Sep. 2015.

【特許・実用新案】

  1. 大河内 俊介, 熊谷 直人, 荒川 泰彦 : 量子ドット構造製造方法および量子ドット構造, 特願2009-287212 (2009年12月), 特開2011-129733 (2011年6月), 特許第5493124号 (2014年3月).


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